![]() Time-dependent field effect in three-dimensional lead-halide perovskite semiconductor thin films. Understanding charge transport in lead iodide perovskite thin-film field-effect transistors. Size-dependent phase transition in methylammonium lead iodide perovskite microplate crystals. Temperature-dependent polarization in field-effect transport and photovoltaic measurements of methylammonium lead iodide. Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature. Lead iodide perovskite light-emitting field-effect transistor. Ligand-driven grain engineering of high mobility two-dimensional perovskite thin-film transistors. This paper reported the air-stable Sn 2+ perovskite transistor using molecule engineering. Highly stable lead-free perovskite field-effect transistors incorporating linear π-conjugated organic ligands. High-performance and reliable lead-free layered-perovskite transistors. Solution-processed organic–inorganic perovskite field-effect transistors with high hole mobilities. This paper pioneered the metal halide perovksite transistor. Organic–inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors. Solution-processed inorganic p-channel transistors: recent advances and perspectives. Hybrid organic–inorganic perovskites: low-cost semiconductors with intriguing charge-transport properties. ![]() Intriguing optoelectronic properties of metal halide perovskites. We also consider the challenges that exist in developing next-generation electronics and circuits with perovskites, and highlight potential research areas for future development. ![]() We examine the electronic and structural properties of halide perovskites, and discuss key perovskite transistors developed so far, focusing on defect chemistry and corresponding electrical properties. Here we explore the development of metal halide perovskite transistors and compare their characteristics with those of mainstream semiconductor technologies. However, critical insight into the electrical properties of the materials is lacking, and their potential for application in large-area and microscale electronics remains unclear. Despite initial challenges affecting perovskite-based transistors in terms of reproducibility and ambient-temperature operation capability, notable performance improvements have been achieved through the fine-tuning of channel material compositions, thin-film processing and device engineering. Advances in metal halide perovskite semiconductors for optoelectronic devices have revived research interest in their applicability in transistors.
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